High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

Yu Chiang Chao, Mu Chun Niu, Hsiao Wen Zan*, Hsin Fei Meng, Ming Che Ku

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

18 引文 斯高帕斯(Scopus)

摘要

The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10-5 cm2/Vs to 10-3 cm 2/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm2 while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.

原文英語
頁(從 - 到)78-82
頁數5
期刊Organic Electronics
12
發行號1
DOIs
出版狀態已發佈 - 2011 一月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 生物材料
  • 化學 (全部)
  • 凝聚態物理學
  • 材料化學
  • 電氣與電子工程

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