High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

Yu Chiang Chao; Mu Chun Niu; Hsiao Wen Zan; Hsin Fei Meng; Ming Che Ku

doi:10.1016/j.orgel.2010.09.023

High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

Yu Chiang Chao, Mu Chun Niu, Hsiao Wen Zan^*, Hsin Fei Meng, Ming Che Ku

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

19 引文斯高帕斯（Scopus）

摘要

The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10^-5 cm²/Vs to 10^-3 cm ²/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm² while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.

原文	英語
頁（從 - 到）	78-82
頁數	5
期刊	Organic Electronics
卷	12
發行號	1
DOIs	https://doi.org/10.1016/j.orgel.2010.09.023
出版狀態	已發佈 - 2011 1月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
生物材料
化學 (全部)
凝聚態物理學
材料化學
電氣與電子工程

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10.1016/j.orgel.2010.09.023

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引用此

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title = "High-mobility polymer space-charge-limited transistor with grid-induced crystallinity",

abstract = "The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10-5 cm2/Vs to 10-3 cm 2/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm2 while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.",

keywords = "Space-charge-limited current, Vertical transistor",

author = "Chao, {Yu Chiang} and Niu, {Mu Chun} and Zan, {Hsiao Wen} and Meng, {Hsin Fei} and Ku, {Ming Che}",

note = "Funding Information: This work is supported by the National Science Council of Taiwan under Contract No. NSC98-2628-M-009-001.",

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AU - Niu, Mu Chun

AU - Zan, Hsiao Wen

AU - Meng, Hsin Fei

AU - Ku, Ming Che

N1 - Funding Information: This work is supported by the National Science Council of Taiwan under Contract No. NSC98-2628-M-009-001.

PY - 2011/1

Y1 - 2011/1

N2 - The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10-5 cm2/Vs to 10-3 cm 2/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm2 while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.

AB - The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10-5 cm2/Vs to 10-3 cm 2/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm2 while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.

KW - Space-charge-limited current

KW - Vertical transistor

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High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

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ASJC Scopus subject areas

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