High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer

H. H. Hsu, P. Chiou, Y. C. Chiu, S. S. Yen, C. Y. Chang, C. H. Cheng

研究成果: 書貢獻/報告類型 › 會議論文篇章

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Engineering & Materials Science