High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer

H. H. Hsu, P. Chiou, Y. C. Chiu, S. S. Yen, C. Y. Chang, Chun-Hu Cheng

研究成果: 書貢獻/報告類型會議論文篇章

摘要

Metal-oxide InGaZnO thin-film transistors (IGZO TFTs) have received substantial attention as potential substitutes for amorphous Si and/or polycrystalline Si in active-matrix liquid-crystal displays, active-matrix organic light emitted diodes (AMOLEDs), and three-dimensional (3D) display applications [1]-[2]. It is well known that the multi-alloy IGZO channel plays an important role in device characteristics such as subthreshold swing (SS) and field-effect mobility (μFE). Although the high-K gate dielectrics to lower operating voltage and threshold voltage (VT) of TFT devices have demonstrated [3]-[5], these critical issues on transfer characteristics still need to be overcome. The large SS and low μFE prevent them from being applied in fast-switching and high-resolution displays. In this paper, we demonstrate high mobility IGZO TFT with titanium oxide (TiO x) channel capping layer. Large μfe of 66 cm 2/Vs and low SS of 79 mV/dec were achieved using narrow-bandgap TiOx (Eg∼ 3.1eV) [6] with optimized 5-nm thickness. The similar bandgap and conduction band offset to those of IGZO are favorable to obtain a low resistance ohmic contact between amorphous IGZO and Al contact metals.

原文英語
主出版物標題72nd Device Research Conference, DRC 2014 - Conference Digest
發行者Institute of Electrical and Electronics Engineers Inc.
頁面107-108
頁數2
ISBN(列印)9781479954056
DOIs
出版狀態已發佈 - 2014 一月 1
事件72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, 美国
持續時間: 2014 六月 222014 六月 25

出版系列

名字Device Research Conference - Conference Digest, DRC
ISSN(列印)1548-3770

其他

其他72nd Device Research Conference, DRC 2014
國家/地區美国
城市Santa Barbara, CA
期間2014/06/222014/06/25

ASJC Scopus subject areas

  • 電氣與電子工程

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