This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-κ SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO2 TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 ± 006V, a low sub-threshold swing of 110 ± 6mV/decade and an extremely high mobility of 60.2 ±32cm2 Vhboxs. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.
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