High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics

Hsiao Hsuan Hsu; Chun Yen Chang; Chun Hu Cheng; Po Chun Chen; Yu Chien Chiu; Ping Chiou; Chin Pao Cheng

doi:10.1109/JDT.2014.2331351

High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics

Hsiao Hsuan Hsu^*, Chun Yen Chang, Chun Hu Cheng, Po Chun Chen, Yu Chien Chiu, Ping Chiou, Chin Pao Cheng

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

15 引文斯高帕斯（Scopus）

摘要

This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO₂ and Y₂O₃ exhibited favorable adhesion properties on a flexible substrate compared with conventional low-κ SiO₂ film. Based on the experimental results, the room-temperature IGZO/HfO₂ TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 ± 006V, a low sub-threshold swing of 110 ± 6mV/decade and an extremely high mobility of 60.2 ±32cm² Vhboxs. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.

原文	英語
文章編號	6837417
頁（從 - 到）	847-853
頁數	7
期刊	IEEE/OSA Journal of Display Technology
卷	10
發行號	10
DOIs	https://doi.org/10.1109/JDT.2014.2331351
出版狀態	已發佈 - 2014 10月 1

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程

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10.1109/JDT.2014.2331351

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title = "High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics",

abstract = "This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-κ SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO2 TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 ± 006V, a low sub-threshold swing of 110 ± 6mV/decade and an extremely high mobility of 60.2 ±32cm2 Vhboxs. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.",

keywords = "Flexible, indium-gallium-zinc oxide (IGZO), room temperature, thin-film transistor (TFT)",

author = "Hsu, {Hsiao Hsuan} and Chang, {Chun Yen} and Cheng, {Chun Hu} and Chen, {Po Chun} and Chiu, {Yu Chien} and Ping Chiou and Cheng, {Chin Pao}",

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AU - Hsu, Hsiao Hsuan

AU - Chang, Chun Yen

AU - Cheng, Chun Hu

AU - Chen, Po Chun

AU - Chiu, Yu Chien

AU - Chiou, Ping

AU - Cheng, Chin Pao

PY - 2014/10/1

Y1 - 2014/10/1

N2 - This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-κ SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO2 TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 ± 006V, a low sub-threshold swing of 110 ± 6mV/decade and an extremely high mobility of 60.2 ±32cm2 Vhboxs. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.

AB - This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-κ SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO2 TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 ± 006V, a low sub-threshold swing of 110 ± 6mV/decade and an extremely high mobility of 60.2 ±32cm2 Vhboxs. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.

KW - Flexible

KW - indium-gallium-zinc oxide (IGZO)

KW - room temperature

KW - thin-film transistor (TFT)

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High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics

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