High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics

Hsiao Hsuan Hsu, Chun Yen Chang, Chun-Hu Cheng, Po Chun Chen, Yu Chien Chiu, Ping Chiou, Chin-Pao Cheng

研究成果: 雜誌貢獻文章

7 引文 (Scopus)

摘要

This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-κ SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO2 TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 ± 006V, a low sub-threshold swing of 110 ± 6mV/decade and an extremely high mobility of 60.2 ±32cm2 Vhboxs. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.

原文英語
文章編號6837417
頁(從 - 到)847-853
頁數7
期刊IEEE/OSA Journal of Display Technology
10
發行號10
DOIs
出版狀態已發佈 - 2014 十月 1

指紋

Gate dielectrics
Thin film transistors
Field effect transistors
transistors
room temperature
Substrates
thin films
Liquid crystal displays
Threshold voltage
threshold voltage
integrity
low voltage
high current
Energy gap
adhesion
Electric power utilization
Adhesion
liquid crystals
Temperature
thresholds

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics. / Hsu, Hsiao Hsuan; Chang, Chun Yen; Cheng, Chun-Hu; Chen, Po Chun; Chiu, Yu Chien; Chiou, Ping; Cheng, Chin-Pao.

於: IEEE/OSA Journal of Display Technology, 卷 10, 編號 10, 6837417, 01.10.2014, p. 847-853.

研究成果: 雜誌貢獻文章

Hsu, Hsiao Hsuan ; Chang, Chun Yen ; Cheng, Chun-Hu ; Chen, Po Chun ; Chiu, Yu Chien ; Chiou, Ping ; Cheng, Chin-Pao. / High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics. 於: IEEE/OSA Journal of Display Technology. 2014 ; 卷 10, 編號 10. 頁 847-853.
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