High mobility bilayer metal-oxide thin film transistors using titanium-doped InGaZnO

Hsiao Hsuan Hsu; Chun Yen Chang; Chun Hu Cheng; Shan Haw Chiou; Chiung Hui Huang

doi:10.1109/LED.2013.2290707

High mobility bilayer metal-oxide thin film transistors using titanium-doped InGaZnO

Hsiao Hsuan Hsu
, Chun Yen Chang
, Chun Hu Cheng
, Shan Haw Chiou
, Chiung Hui Huang

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

60 引文斯高帕斯（Scopus）

摘要

We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of < 2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 × 10^?11 A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm₂/Vs, which may create the potential application for high resolution display.

原文	英語
文章編號	6679240
頁（從 - 到）	87-89
頁數	3
期刊	IEEE Electron Device Letters
卷	35
發行號	1
DOIs	https://doi.org/10.1109/LED.2013.2290707
出版狀態	已發佈 - 2014 1月

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/LED.2013.2290707

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abstract = "We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of < 2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 × 10?11 A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm2/Vs, which may create the potential application for high resolution display.",

keywords = "TiO, gettering, indium-gallium-zinc oxide (IGZO), mobility, thin-film transistor (TFT)",

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AU - Cheng, Chun Hu

AU - Chiou, Shan Haw

AU - Huang, Chiung Hui

PY - 2014/1

Y1 - 2014/1

N2 - We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of < 2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 × 10?11 A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm2/Vs, which may create the potential application for high resolution display.

AB - We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of < 2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 × 10?11 A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm2/Vs, which may create the potential application for high resolution display.

KW - TiO

KW - gettering

KW - indium-gallium-zinc oxide (IGZO)

KW - mobility

KW - thin-film transistor (TFT)

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High mobility bilayer metal-oxide thin film transistors using titanium-doped InGaZnO

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ASJC Scopus subject areas

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