High mobility bilayer metal-oxide thin film transistors using titanium-doped InGaZnO

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng, Shan Haw Chiou, Chiung Hui Huang

研究成果: 雜誌貢獻期刊論文同行評審

37 引文 斯高帕斯(Scopus)

摘要

We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of < 2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 × 10?11 A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm2/Vs, which may create the potential application for high resolution display.

原文英語
文章編號6679240
頁(從 - 到)87-89
頁數3
期刊IEEE Electron Device Letters
35
發行號1
DOIs
出版狀態已發佈 - 2014 一月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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