High light-extraction GaN-based vertical LEDs with double diffuse surfaces

Y. J. Lee, H. C. Kuo, T. C. Lu, S. C. Wang

研究成果: 書貢獻/報告類型會議貢獻

摘要

High light-extraction (external quantum efficiency ∼40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. The high scattering efficiency of double diffused surfaces could be responsible for the high light output power.

原文英語
主出版物標題Conference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs
出版狀態已發佈 - 2007 十二月 1
事件Conference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, 美国
持續時間: 2007 五月 62007 五月 11

出版系列

名字Conference on Lasers and Electro-Optics, 2007, CLEO 2007

其他

其他Conference on Lasers and Electro-Optics, 2007, CLEO 2007
國家美国
城市Baltimore, MD
期間07/5/607/5/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • 引用此

    Lee, Y. J., Kuo, H. C., Lu, T. C., & Wang, S. C. (2007). High light-extraction GaN-based vertical LEDs with double diffuse surfaces. 於 Conference on Lasers and Electro-Optics, 2007, CLEO 2007 [4453006] (Conference on Lasers and Electro-Optics, 2007, CLEO 2007). https://doi.org/10.1109/CLEO.2007.4453006