High internal differential efficiency mid-infrared quantum cascade lasers

Dan Botez, Jeremy D. Kirch, Chun Chieh Chang, Colin Boyle, Honghyuk Kim, Kevin M. Oresick, Chris Sigler, Luke J. Mawst, Minhyeok Jo, Jae Cheol Shin, Doo Gun-Kim, Don F. Lindberg, Thomas L. Earles

研究成果: 書貢獻/報告類型會議論文篇章

9 引文 斯高帕斯(Scopus)

摘要

Implementation of the step-taper active-region (STA) design to 8-9 μm-emitting quantum cascade lasers (QCLs) has resulted in both high T0 and T1 values: 220 K and 665 K, and short lower-level lifetimes: 0.12 ps. In turn, the internal differential efficiency ηid, which is the product of the injection efficiency and the differential laser-transition efficiency, reaches values as high as 86 % for both 8.4 μm- and 8.8 μm-emitting QCLs. Such ηid values are 30-50% higher than those obtained from conventional QCLs emitting in the 7-11 μm wavelength range. Achieving both carrier-leakage suppression and miniband-like carrier extraction in mid-infrared (IR) QCLs leads to ηid values close to the fundamental limit of ∼ 90 %. In turn, the currently employed fundamental wallplug-efficiency limits over the mid-IR wavelength range have to be increased by ∼ 34 % (e.g., the wallplug-efficiency limit at λ= 4.6 μm increases from 29 % to 39 %). Preliminary results from STA-type 4.8-5.0 μm-emitting QCLs include 1.5 W CW operation, and 77 % internal differential efficiency; that is, 30-50% higher than the ηid values obtained from conventional 4.0-6.5μm-emitting QCLs.

原文英語
主出版物標題Novel In-Plane Semiconductor Lasers XVI
編輯Peter M. Smowton, Alexey A. Belyanin
發行者SPIE
ISBN(電子)9781510606876
DOIs
出版狀態已發佈 - 2017
對外發佈
事件Novel In-Plane Semiconductor Lasers XVI 2017 - San Francisco, 美国
持續時間: 2017 一月 302017 二月 2

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
10123
ISSN(列印)0277-786X
ISSN(電子)1996-756X

會議

會議Novel In-Plane Semiconductor Lasers XVI 2017
國家/地區美国
城市San Francisco
期間2017/01/302017/02/02

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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