@article{575146ece4854ca6b9c92b703ca06153,
title = "High ge content of SiGe channel pMOSFETs on Si (110) surfaces",
abstract = "The characteristics of \$\textbackslash{}hbox\{Si\}-\{0.2\}\textbackslash{}hbox\{Ge\}-\{0.8\}\$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70\% and by 80\% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200\% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.",
keywords = "(110), Mobility, Orientation, SiGe, Strain",
author = "Lee, \{M. H.\} and Chang, \{S. T.\} and S. Maikap and Peng, \{C. Y.\} and Lee, \{C. H.\}",
note = "Funding Information: Manuscript received October 26, 2009; revised October 28, 2009. First published December 31, 2009; current version published January 27, 2010. This work was supported in part by the National Science Council under Grants 98-2221-E-003-020-MY3 and 97-2622-E-003-003-CC1, by the National Nano Device Laboratories, and by the Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Taiwan. The review of this letter was arranged by Editor S. Kawamura.",
year = "2010",
month = feb,
doi = "10.1109/LED.2009.2036138",
language = "English",
volume = "31",
pages = "141--143",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}