High ge content of SiGe channel pMOSFETs on Si (110) surfaces

Min-Hung Lee, S. T. Chang, S. Maikap, C. Y. Peng, C. H. Lee

研究成果: 雜誌貢獻文章

14 引文 (Scopus)

摘要

The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

原文英語
文章編號5371936
頁(從 - 到)141-143
頁數3
期刊IEEE Electron Device Letters
31
發行號2
DOIs
出版狀態已發佈 - 2010 二月 1

指紋

Hole mobility
Drain current

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Lee, M-H., Chang, S. T., Maikap, S., Peng, C. Y., & Lee, C. H. (2010). High ge content of SiGe channel pMOSFETs on Si (110) surfaces. IEEE Electron Device Letters, 31(2), 141-143. [5371936]. https://doi.org/10.1109/LED.2009.2036138

High ge content of SiGe channel pMOSFETs on Si (110) surfaces. / Lee, Min-Hung; Chang, S. T.; Maikap, S.; Peng, C. Y.; Lee, C. H.

於: IEEE Electron Device Letters, 卷 31, 編號 2, 5371936, 01.02.2010, p. 141-143.

研究成果: 雜誌貢獻文章

Lee, M-H, Chang, ST, Maikap, S, Peng, CY & Lee, CH 2010, 'High ge content of SiGe channel pMOSFETs on Si (110) surfaces', IEEE Electron Device Letters, 卷 31, 編號 2, 5371936, 頁 141-143. https://doi.org/10.1109/LED.2009.2036138
Lee, Min-Hung ; Chang, S. T. ; Maikap, S. ; Peng, C. Y. ; Lee, C. H. / High ge content of SiGe channel pMOSFETs on Si (110) surfaces. 於: IEEE Electron Device Letters. 2010 ; 卷 31, 編號 2. 頁 141-143.
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