High ge content of SiGe channel pMOSFETs on Si (110) surfaces

M. H. Lee, S. T. Chang, S. Maikap, C. Y. Peng, C. H. Lee

研究成果: 雜誌貢獻文章同行評審

14 引文 斯高帕斯(Scopus)

摘要

The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

原文英語
文章編號5371936
頁(從 - 到)141-143
頁數3
期刊IEEE Electron Device Letters
31
發行號2
DOIs
出版狀態已發佈 - 2010 二月

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

指紋 深入研究「High ge content of SiGe channel pMOSFETs on Si (110) surfaces」主題。共同形成了獨特的指紋。

引用此