@article{ec498c8a8c4b453a8bc80d3f84d92a26,
title = "High-Frequency Graphene Base Hot-Electron Transistor",
abstract = "The integration of graphene and other two-dimensional (2D) materials with existing silicon semiconductor technology is highly desirable. This is due to the diverse advantages and potential applications brought about by the consequent miniaturization of the resulting electronic devices. Nevertheless, such devices that can operate at very high frequencies for high-speed applications are eminently preferred. In this work, we demonstrate a vertical graphene base hot-electron transistor that performs in the radio frequency regime. Our device exhibits a relatively high current density (μ200 A/cm2), high common base current gain (α∗ ∼99.2%), and moderate common emitter current gain (β∗ ∼2.7) at room temperature with an intrinsic current gain cutoff frequency of around 65 GHz. Furthermore, cutoff frequency can be tuned from 54 to 65 GHz by varying the collector-base bias. We anticipate that this proposed transistor design, built by the integrated 2D material and silicon semiconductor technology, can be a potential candidate to realize extra fast radio frequency tunneling hot-carrier electronics. ",
keywords = "hot carriers, hot-electron transistor, radio frequency electronics, tunneling electronics, two-dimensional materials",
author = "Liang, {Bor Wei} and Chang, {Wen Hao} and Lin, {Hung Yu} and Chen, {Po Chun} and Zhang, {Yi Tang} and Simbulan, {Kristan Bryan} and Li, {Kai Shin} and Chen, {Jyun Hong} and Kuan, {Chieh Hsiung} and Lan, {Yann Wen}",
note = "Funding Information: This work was supported by Ministry of Science and Technology, Taiwan (MOST-105-2112-M-003-016-MY3, MOST 108-2112-M-003-010-MY3, and MOST 109-2221-E-002-128). This work was also in part supported by the Taiwan Semiconductor Research Institute. We would like to thank Prof. Mario Hofmann and Prof. Ya-Ping Hsieh for providing us with CVD grown graphene and acknowledge the fact that the h-BN was made by Wei-Hsiang Lin and obtained from Prof. Nai-Chang Yeh{\textquoteright}s lab at Caltech. We appreciate the fruitful discussions with and helpful suggestions from Prof. Kun-You Lin and Prof. Yuen-Wuu Suen. Publisher Copyright: {\textcopyright} 2021 American Chemical Society.",
year = "2021",
month = apr,
day = "27",
doi = "10.1021/acsnano.0c10208",
language = "English",
volume = "15",
pages = "6756--6764",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "4",
}