High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

W. B. Chen, C. H. Cheng, C. W. Lin, P. C. Chen, Albert Chin*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

6 引文 斯高帕斯(Scopus)

指紋

深入研究「High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness」主題。共同形成了獨特的指紋。

Physics & Astronomy

Engineering & Materials Science

Chemical Compounds