摘要
We fabricated high performance gate-last TaN/La2O 3/SiO2 on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm2/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO2-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA).
原文 | 英語 |
---|---|
頁(從 - 到) | 64-67 |
頁數 | 4 |
期刊 | Solid-State Electronics |
卷 | 55 |
發行號 | 1 |
DOIs | |
出版狀態 | 已發佈 - 2011 1月 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 電子、光磁材料
- 凝聚態物理學
- 電氣與電子工程
- 材料化學