High-field electron transport in GaAs: a picosecond time-resolved Raman probe

Erik D. Grann; Shou J. Sheih; C. Chia; Kong T. Tsen; Otto F. Sankey; George N. Maracas; R. Droopad; A. Salvador; A. Botcharev; Hadis Morkoc

High-field electron transport in GaAs: a picosecond time-resolved Raman probe

Erik D. Grann^*
, Shou J. Sheih
, C. Chia
, Kong T. Tsen
, Otto F. Sankey
, George N. Maracas
, R. Droopad
, A. Salvador
, A. Botcharev
, Hadis Morkoc

^*此作品的通信作者

研究成果: 書貢獻/報告類型 › 會議論文篇章

1 引文斯高帕斯（Scopus）

摘要

Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 10¹⁸ cm^-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as V_d = 2.5 × 10⁷ cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.

原文	英語
主出版物標題	Proceedings of SPIE - The International Society for Optical Engineering
編輯	David K. Ferry, Henry M. van Driel
頁面	190-197
頁數	8
出版狀態	已發佈 - 1994
對外發佈	是
事件	Ultrafast Phenomena in Semiconductors - Los Angeles, CA, USA 持續時間: 1994 1月 27 → 1994 1月 28

出版系列

名字	Proceedings of SPIE - The International Society for Optical Engineering
卷	2142
ISSN（列印）	0277-786X

其他

其他	Ultrafast Phenomena in Semiconductors
城市	Los Angeles, CA, USA
期間	1994/01/27 → 1994/01/28

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電腦科學應用
應用數學
電氣與電子工程

其它文件與鏈接

Link to publication in Scopus

引用此

Grann, E. D., Sheih, S. J., Chia, C., Tsen, K. T., Sankey, O. F., Maracas, G. N., Droopad, R., Salvador, A., Botcharev, A., & Morkoc, H. (1994). High-field electron transport in GaAs: a picosecond time-resolved Raman probe. 於 D. K. Ferry, & H. M. van Driel (編輯), Proceedings of SPIE - The International Society for Optical Engineering (頁 190-197). (Proceedings of SPIE - The International Society for Optical Engineering; 卷 2142).

High-field electron transport in GaAs: a picosecond time-resolved Raman probe. / Grann, Erik D.; Sheih, Shou J.; Chia, C. 等.
Proceedings of SPIE - The International Society for Optical Engineering. 編輯 / David K. Ferry; Henry M. van Driel. 1994. p. 190-197 (Proceedings of SPIE - The International Society for Optical Engineering; 卷 2142).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Grann, ED, Sheih, SJ, Chia, C, Tsen, KT, Sankey, OF, Maracas, GN, Droopad, R, Salvador, A, Botcharev, A & Morkoc, H 1994, High-field electron transport in GaAs: a picosecond time-resolved Raman probe. 於 DK Ferry & HM van Driel (編輯), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, 卷 2142, 頁 190-197, Ultrafast Phenomena in Semiconductors, Los Angeles, CA, USA, 1994/01/27.

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title = "High-field electron transport in GaAs: a picosecond time-resolved Raman probe",

abstract = "Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 1018 cm-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as Vd = 2.5 × 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.",

author = "Grann, \{Erik D.\} and Sheih, \{Shou J.\} and C. Chia and Tsen, \{Kong T.\} and Sankey, \{Otto F.\} and Maracas, \{George N.\} and R. Droopad and A. Salvador and A. Botcharev and Hadis Morkoc",

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T2 - Ultrafast Phenomena in Semiconductors

AU - Grann, Erik D.

AU - Sheih, Shou J.

AU - Chia, C.

AU - Tsen, Kong T.

AU - Sankey, Otto F.

AU - Maracas, George N.

AU - Droopad, R.

AU - Salvador, A.

AU - Botcharev, A.

AU - Morkoc, Hadis

PY - 1994

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N2 - Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 1018 cm-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as Vd = 2.5 × 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.

AB - Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 1018 cm-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as Vd = 2.5 × 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.

UR - https://www.scopus.com/pages/publications/0028743894

UR - https://www.scopus.com/pages/publications/0028743894#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:0028743894

SN - 0819414379

SN - 9780819414373

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 190

EP - 197

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Ferry, David K.

A2 - van Driel, Henry M.

Y2 - 27 January 1994 through 28 January 1994

ER -

High-field electron transport in GaAs: a picosecond time-resolved Raman probe

摘要

出版系列

其他

ASJC Scopus subject areas

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