@inproceedings{bb9e3cfe0469459aac4481aada27de16,
title = "High-field electron transport in GaAs: a picosecond time-resolved Raman probe",
abstract = "Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 1018 cm-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as Vd = 2.5 × 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.",
author = "Grann, {Erik D.} and Sheih, {Shou J.} and C. Chia and Tsen, {Kong T.} and Sankey, {Otto F.} and Maracas, {George N.} and R. Droopad and A. Salvador and A. Botcharev and Hadis Morkoc",
year = "1994",
language = "English",
isbn = "0819414379",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
pages = "190--197",
editor = "Ferry, {David K.} and {van Driel}, {Henry M.}",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Ultrafast Phenomena in Semiconductors ; Conference date: 27-01-1994 Through 28-01-1994",
}