High-field electron transport in GaAs: a picosecond time-resolved Raman probe

Erik D. Grann, Shou J. Sheih, C. Chia, Kong T. Tsen, Otto F. Sankey, George N. Maracas, R. Droopad, A. Salvador, A. Botcharev, Hadis Morkoc

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

摘要

Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 1018 cm-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as Vd = 2.5 × 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.

原文英語
主出版物標題Proceedings of SPIE - The International Society for Optical Engineering
編輯David K. Ferry, Henry M. van Driel
頁面190-197
頁數8
出版狀態已發佈 - 1994 十二月 1
事件Ultrafast Phenomena in Semiconductors - Los Angeles, CA, USA
持續時間: 1994 一月 271994 一月 28

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
2142
ISSN(列印)0277-786X

其他

其他Ultrafast Phenomena in Semiconductors
城市Los Angeles, CA, USA
期間94/1/2794/1/28

    指紋

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

引用此

Grann, E. D., Sheih, S. J., Chia, C., Tsen, K. T., Sankey, O. F., Maracas, G. N., Droopad, R., Salvador, A., Botcharev, A., & Morkoc, H. (1994). High-field electron transport in GaAs: a picosecond time-resolved Raman probe. 於 D. K. Ferry, & H. M. van Driel (編輯), Proceedings of SPIE - The International Society for Optical Engineering (頁 190-197). (Proceedings of SPIE - The International Society for Optical Engineering; 卷 2142).