High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C

Chyuan Haur Kao; Kou Chen Liu; Min Hung Lee; Shih Nan Cheng; Ching Hua Huang; Wen Kai Lin

doi:10.1016/j.tsf.2011.10.173

High dielectric constant terbium oxide (Tb ₂O ₃) dielectric deposited on strained-Si:C

Chyuan Haur Kao^*
, Kou Chen Liu
, Min Hung Lee
, Shih Nan Cheng
, Ching Hua Huang
, Wen Kai Lin

^*此作品的通信作者

光電工程研究所暨學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

High-k Tb ₂O ₃ films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb ₂O ₃ dielectrics properly annealed at 800°C form well-crystallized Tb ₂O ₃ structures with few defects.

原文	英語
頁（從 - 到）	3402-3405
頁數	4
期刊	Thin Solid Films
卷	520
發行號	8
DOIs	https://doi.org/10.1016/j.tsf.2011.10.173
出版狀態	已發佈 - 2012 2月 1

ASJC Scopus subject areas

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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10.1016/j.tsf.2011.10.173

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@article{7a9a97148c7c44efab168b10466de564,

title = "High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C",

abstract = "High-k Tb 2O 3 films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb 2O 3 dielectrics properly annealed at 800°C form well-crystallized Tb 2O 3 structures with few defects.",

keywords = "Rapid thermal annealing, Strained-Si:C, Terbium oxide",

author = "Kao, \{Chyuan Haur\} and Liu, \{Kou Chen\} and Lee, \{Min Hung\} and Cheng, \{Shih Nan\} and Huang, \{Ching Hua\} and Lin, \{Wen Kai\}",

note = "Funding Information: This work was supported by the National Science Council under the contract of NSC 99-2221-E-182-060 .",

year = "2012",

month = feb,

day = "1",

doi = "10.1016/j.tsf.2011.10.173",

language = "English",

volume = "520",

pages = "3402--3405",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier BV",

number = "8",

}

TY - JOUR

T1 - High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C

AU - Kao, Chyuan Haur

AU - Liu, Kou Chen

AU - Lee, Min Hung

AU - Cheng, Shih Nan

AU - Huang, Ching Hua

AU - Lin, Wen Kai

N1 - Funding Information: This work was supported by the National Science Council under the contract of NSC 99-2221-E-182-060 .

PY - 2012/2/1

Y1 - 2012/2/1

N2 - High-k Tb 2O 3 films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb 2O 3 dielectrics properly annealed at 800°C form well-crystallized Tb 2O 3 structures with few defects.

AB - High-k Tb 2O 3 films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb 2O 3 dielectrics properly annealed at 800°C form well-crystallized Tb 2O 3 structures with few defects.

KW - Rapid thermal annealing

KW - Strained-Si:C

KW - Terbium oxide

UR - https://www.scopus.com/pages/publications/84857044888

UR - https://www.scopus.com/pages/publications/84857044888#tab=citedBy

U2 - 10.1016/j.tsf.2011.10.173

DO - 10.1016/j.tsf.2011.10.173

M3 - Article

AN - SCOPUS:84857044888

SN - 0040-6090

VL - 520

SP - 3402

EP - 3405

JO - Thin Solid Films

JF - Thin Solid Films

IS - 8

ER -

High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C

摘要

ASJC Scopus subject areas

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High dielectric constant terbium oxide (Tb ₂O ₃) dielectric deposited on strained-Si:C