High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C

Chyuan Haur Kao; Kou Chen Liu; Min Hung Lee; Shih Nan Cheng; Ching Hua Huang; Wen Kai Lin

doi:10.1016/j.tsf.2011.10.173

High dielectric constant terbium oxide (Tb ₂O ₃) dielectric deposited on strained-Si:C

Chyuan Haur Kao^*, Kou Chen Liu, Min Hung Lee, Shih Nan Cheng, Ching Hua Huang, Wen Kai Lin

^*此作品的通信作者

光電工程學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

High-k Tb ₂O ₃ films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb ₂O ₃ dielectrics properly annealed at 800°C form well-crystallized Tb ₂O ₃ structures with few defects.

原文	英語
頁（從 - 到）	3402-3405
頁數	4
期刊	Thin Solid Films
卷	520
發行號	8
DOIs	https://doi.org/10.1016/j.tsf.2011.10.173
出版狀態	已發佈 - 2012 2月 1

ASJC Scopus subject areas

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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10.1016/j.tsf.2011.10.173

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title = "High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C",

abstract = "High-k Tb 2O 3 films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb 2O 3 dielectrics properly annealed at 800°C form well-crystallized Tb 2O 3 structures with few defects.",

keywords = "Rapid thermal annealing, Strained-Si:C, Terbium oxide",

author = "Kao, {Chyuan Haur} and Liu, {Kou Chen} and Lee, {Min Hung} and Cheng, {Shih Nan} and Huang, {Ching Hua} and Lin, {Wen Kai}",

note = "Funding Information: This work was supported by the National Science Council under the contract of NSC 99-2221-E-182-060 .",

year = "2012",

month = feb,

day = "1",

doi = "10.1016/j.tsf.2011.10.173",

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T1 - High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C

AU - Kao, Chyuan Haur

AU - Liu, Kou Chen

AU - Lee, Min Hung

AU - Cheng, Shih Nan

AU - Huang, Ching Hua

AU - Lin, Wen Kai

N1 - Funding Information: This work was supported by the National Science Council under the contract of NSC 99-2221-E-182-060 .

PY - 2012/2/1

Y1 - 2012/2/1

N2 - High-k Tb 2O 3 films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb 2O 3 dielectrics properly annealed at 800°C form well-crystallized Tb 2O 3 structures with few defects.

AB - High-k Tb 2O 3 films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb 2O 3 dielectrics properly annealed at 800°C form well-crystallized Tb 2O 3 structures with few defects.

KW - Rapid thermal annealing

KW - Strained-Si:C

KW - Terbium oxide

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DO - 10.1016/j.tsf.2011.10.173

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VL - 520

SP - 3402

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JO - Thin Solid Films

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High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C

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ASJC Scopus subject areas

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High dielectric constant terbium oxide (Tb ₂O ₃) dielectric deposited on strained-Si:C