High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C

Chyuan Haur Kao, Kou Chen Liu, Min Hung Lee, Shih Nan Cheng, Ching Hua Huang, Wen Kai Lin

研究成果: 雜誌貢獻文章同行評審

4 引文 斯高帕斯(Scopus)

摘要

High-k Tb 2O 3 films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb 2O 3 dielectrics properly annealed at 800°C form well-crystallized Tb 2O 3 structures with few defects.

原文英語
頁(從 - 到)3402-3405
頁數4
期刊Thin Solid Films
520
發行號8
DOIs
出版狀態已發佈 - 2012 二月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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