@article{7df9024485b34d2589a757e2cdaa492d,
title = "High density and low leakage current in TiO2 MIM capacitors processed at 300°C",
abstract = "We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300°C, which show a capacitance density of 28 fF/ μm2 and a leakage current of 3 × 10-8 (25 °C) or 6 × 10-7 (125 °C) A/cm2 at -1 V. This performance is due to the combined effects of 300 °C nanocrystallized high-κ TiO2, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.",
keywords = "High κ, Ir, Metal-insulator-metal (MIM), TiO",
author = "Cheng, {C. H.} and Lin, {S. H.} and Jhou, {K. Y.} and Chen, {W. J.} and Chou, {C. P.} and Yeh, {F. S.} and Jim Hu and M. Hwang and T. Arikado and McAlister, {Sean P.} and Albert Chin",
note = "Funding Information: The National Chiao Tung University (NCTU) team would like to thank the support from Tokyo Electron Ltd. and NSC (95-2221-E-009-298-MY3).",
year = "2008",
month = aug,
doi = "10.1109/LED.2008.2000833",
language = "English",
volume = "29",
pages = "845--847",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}