High-Current Gain Two-Dimensional MoS2-Base Hot-Electron Transistors

Carlos M. Torres*, Yann Wen Lan, Caifu Zeng, Jyun Hong Chen, Xufeng Kou, Aryan Navabi, Jianshi Tang, Mohammad Montazeri, James R. Adleman, Mitchell B. Lerner, Yuan Liang Zhong, Lain Jong Li, Chii Dong Chen, Kang L. Wang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

37 引文 斯高帕斯(Scopus)

摘要

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications.

原文英語
頁(從 - 到)7905-7912
頁數8
期刊Nano Letters
15
發行號12
DOIs
出版狀態已發佈 - 2015 十二月 9

ASJC Scopus subject areas

  • 生物工程
  • 化學 (全部)
  • 材料科學(全部)
  • 凝聚態物理學
  • 機械工業

指紋

深入研究「High-Current Gain Two-Dimensional MoS<sub>2</sub>-Base Hot-Electron Transistors」主題。共同形成了獨特的指紋。

引用此