High brightness GaN-based light-emitting diodes

Ya Ju Lee; Tien Chang Lu; Hao Chung Kuo; Shing Chung Wang

doi:10.1109/JDT.2007.894380

High brightness GaN-based light-emitting diodes

Ya Ju Lee^*, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

47 引文斯高帕斯（Scopus）

摘要

This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.

原文	英語
頁（從 - 到）	118-125
頁數	8
期刊	IEEE/OSA Journal of Display Technology
卷	3
發行號	2
DOIs	https://doi.org/10.1109/JDT.2007.894380
出版狀態	已發佈 - 2007 6月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程

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10.1109/JDT.2007.894380

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@article{f14c6b43d5a4477e85fb1df96557e57f,

title = "High brightness GaN-based light-emitting diodes",

abstract = "This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40\%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.",

keywords = "Extraction quantum efficiency, GaN, Internal quantum efficiency, Light-emitting diodes (LEDs)",

author = "Lee, \{Ya Ju\} and Lu, \{Tien Chang\} and Kuo, \{Hao Chung\} and Wang, \{Shing Chung\}",

note = "Funding Information: Manuscript received July 15, 2006; revised November 15, 2006. This work was supported by the MOE ATU program and in part by the National Science Council, R.O.C., under NSC 95-2120-M-009-008, NSC 95-2752-E-009-007-PAE, and NSC 95-2221-E-009-282.",

year = "2007",

month = jun,

doi = "10.1109/JDT.2007.894380",

language = "English",

volume = "3",

pages = "118--125",

journal = "IEEE/OSA Journal of Display Technology",

issn = "1551-319X",

publisher = "IEEE Computer Society",

number = "2",

}

TY - JOUR

T1 - High brightness GaN-based light-emitting diodes

AU - Lee, Ya Ju

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

N1 - Funding Information: Manuscript received July 15, 2006; revised November 15, 2006. This work was supported by the MOE ATU program and in part by the National Science Council, R.O.C., under NSC 95-2120-M-009-008, NSC 95-2752-E-009-007-PAE, and NSC 95-2221-E-009-282.

PY - 2007/6

Y1 - 2007/6

N2 - This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.

AB - This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.

KW - Extraction quantum efficiency

KW - GaN

KW - Internal quantum efficiency

KW - Light-emitting diodes (LEDs)

UR - https://www.scopus.com/pages/publications/34249305526

UR - https://www.scopus.com/inward/citedby.url?scp=34249305526&partnerID=8YFLogxK

U2 - 10.1109/JDT.2007.894380

DO - 10.1109/JDT.2007.894380

M3 - Article

AN - SCOPUS:34249305526

SN - 1551-319X

VL - 3

SP - 118

EP - 125

JO - IEEE/OSA Journal of Display Technology

JF - IEEE/OSA Journal of Display Technology

IS - 2

ER -

High brightness GaN-based light-emitting diodes

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