High brightness GaN-based light-emitting diodes

Ya Ju Lee, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

研究成果: 雜誌貢獻文章

42 引文 斯高帕斯(Scopus)

摘要

This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.

原文英語
頁(從 - 到)118-125
頁數8
期刊IEEE/OSA Journal of Display Technology
3
發行號2
DOIs
出版狀態已發佈 - 2007 六月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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