High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector

Y. J. Lee*, T. C. Lu, H. C. Kuo, S. C. Wang, M. J. Liou, C. W. Chang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

8 引文 斯高帕斯(Scopus)

摘要

An n-side-up AlGaInP-based LED operating at a wavelength of 630 nm with a stripe-patterned omni-directional reflector (ODR) was fabricated by adopting the adhesive-layer bonding scheme. It is demonstrated that the periodic and geometrical shape of the stripe-patterned array improves the light extraction efficiency by increasing the extraction of guided light. Compared to the conventional ODR LED, the stripe-patterned ODR LED significantly enhanced the output power and with only a slightly higher forward voltage. This improvement was analysed by the scanning near-field optical microscope (SNOM) and the optimized dimension of stripe patterns was also calculated on the basis of a Monte Carlo ray tracing simulation. According to the above analysis, the increase of light extraction could not only be attributed to the geometrical shape of the stripe patterns that redirect the trapped light towards the top-escaping cone of the LED surface but also to the repetitive stripe-patterned array of diffracting elements that effectively diffract the guided light outside the LED surface. Moreover, the optimized dimension of the stripe pattern is 3 νm wide, 2 νm deep and spaced 3 νm apart, which coincides with experimental results.

原文英語
頁(從 - 到)184-189
頁數6
期刊Semiconductor Science and Technology
21
發行號2
DOIs
出版狀態已發佈 - 2006 二月 1
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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