High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

Ya Ju Lee*, Yung Chi Yao, Chun Ying Huang, Tai Yuan Lin, Li Lien Cheng, Ching Yun Liu, Mei Tan Wang, Jung Min Hwang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

25 引文 斯高帕斯(Scopus)

摘要

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

原文英語
文章編號433
頁(從 - 到)1-9
頁數9
期刊Nanoscale Research Letters
9
發行號1
DOIs
出版狀態已發佈 - 2014

ASJC Scopus subject areas

  • 材料科學(全部)
  • 凝聚態物理學

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