@article{f7ee2bb0b55144e1a05d2849d4043f89,
title = "High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers",
abstract = "In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.",
keywords = "2-DEG, AlGaN/GaN HEMT, Breakdown voltage",
author = "Lee, {Ya Ju} and Yao, {Yung Chi} and Huang, {Chun Ying} and Lin, {Tai Yuan} and Cheng, {Li Lien} and Liu, {Ching Yun} and Wang, {Mei Tan} and Hwang, {Jung Min}",
note = "Funding Information: The authors gratefully acknowledge financial support from the National Science Council of the Republic of China (ROC) in Taiwan (contract no. NSC–100–2112–M–003–006–MY3), from the Bureau of Energy, Ministry of Economic Affairs in Taiwan, and from the Ministry of Science and Technology in Taiwan (contract no. MOST 103–2112–M–003–008–MY3).",
year = "2014",
doi = "10.1186/1556-276X-9-433",
language = "English",
volume = "9",
pages = "1--9",
journal = "Nanoscale Research Letters",
issn = "1931-7573",
publisher = "Springer New York",
number = "1",
}