High- κ TiCeO MIM capacitors with a dual-plasma interface treatment

In this study, we successfully fabricated high- κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve capacitor performance at a 400°C thermal budget. The Ir/TiCeO/TaN MIM capacitor achieved a high capacitance density of ∼17 fF/μ m² at a 22 nm thickness and a low quadratic coefficient of capacitance (VCC-α) of 866 ppm/ V² at a 10.3 fF/μ m² density. The good performance is due to the combined effects of a dual-plasma interface treatment, higher- κ TiCeO dielectrics, and a high work-function Ir metal.