High- κ TiCeO MIM capacitors with a dual-plasma interface treatment

C. H. Cheng, H. H. Hsu, I. J. Hsieh, C. K. Deng, Albert Chin, F. S. Yeh

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this study, we successfully fabricated high- κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve capacitor performance at a 400°C thermal budget. The Ir/TiCeO/TaN MIM capacitor achieved a high capacitance density of ∼17 fF/μ m2 at a 22 nm thickness and a low quadratic coefficient of capacitance (VCC-α) of 866 ppm/ V2 at a 10.3 fF/μ m2 density. The good performance is due to the combined effects of a dual-plasma interface treatment, higher- κ TiCeO dielectrics, and a high work-function Ir metal.

原文英語
頁(從 - 到)H112-H115
期刊Electrochemical and Solid-State Letters
13
發行號4
DOIs
出版狀態已發佈 - 2010 二月 22

ASJC Scopus subject areas

  • 化學工程 (全部)
  • 材料科學(全部)
  • 物理與理論化學
  • 電化學
  • 電氣與電子工程

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