In this study, we successfully fabricated high- κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve capacitor performance at a 400°C thermal budget. The Ir/TiCeO/TaN MIM capacitor achieved a high capacitance density of ∼17 fF/μ m2 at a 22 nm thickness and a low quadratic coefficient of capacitance (VCC-α) of 866 ppm/ V2 at a 10.3 fF/μ m2 density. The good performance is due to the combined effects of a dual-plasma interface treatment, higher- κ TiCeO dielectrics, and a high work-function Ir metal.
ASJC Scopus subject areas
- 化學工程 (全部)