Hexagonal-to-cubic phase transformation in GaN nanowires by Ga+ implantation

S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, Y. L. Wang, C. W. Hsu, C. H. Shen, L. C. Chen*, C. C. Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

31 引文 斯高帕斯(Scopus)

摘要

Hexagonal-to-cubic phase transformation was carried out in gallium nitride nanowires using gallium ion implantation. The phase transformation was confirmed by performing optical photoluminescence, cathodoluminescence and high-resolution transmission electron microscopy (HRTEM). The deposition of Gallium from the implanted source reduced the surface energy and stablized the cubic phase. It was found that the fluctuations in the short-range order induced by dynamic annealing with the irradiation process stabilize the cubic phase and cause the phase transformation.

原文英語
頁(從 - 到)5473-5475
頁數3
期刊Applied Physics Letters
84
發行號26
DOIs
出版狀態已發佈 - 2004 六月 28

ASJC Scopus subject areas

  • 物理與天文學(雜項)

指紋

深入研究「Hexagonal-to-cubic phase transformation in GaN nanowires by Ga<sup>+</sup> implantation」主題。共同形成了獨特的指紋。

引用此