Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending

M. H. Lee*, S. T. Chang, C. W. Tai, J. D. Shen, C. C. Lee

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

2 引文 斯高帕斯(Scopus)

摘要

The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cell with mechanical bending was studied in this work. The efficiency decreased with mechanical strain increasing due to bandgap narrowing. The advantage of wafer thin down for HIT is not only decreasing electron-hole recombination, but also reducing variation of performance with mechanical strains.

原文英語
主出版物標題Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
頁面2891-2893
頁數3
DOIs
出版狀態已發佈 - 2011
事件37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, 美国
持續時間: 2011 六月 192011 六月 24

出版系列

名字Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(列印)0160-8371

其他

其他37th IEEE Photovoltaic Specialists Conference, PVSC 2011
國家/地區美国
城市Seattle, WA
期間2011/06/192011/06/24

ASJC Scopus subject areas

  • 控制與系統工程
  • 工業與製造工程
  • 電氣與電子工程

指紋

深入研究「Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending」主題。共同形成了獨特的指紋。

引用此