Heteroepitaxial growth of sixfold symmetric osmium on Si (111) and Si (100)

Tai Yen Peng, C. K. Lo, Y. D. Yao, San Yuan Chen

研究成果: 雜誌貢獻期刊論文同行評審

6 引文 斯高帕斯(Scopus)

摘要

Growing sixfold symmetric osmium (Os) epitaxial films with suitable buffer layers was developed. Using a Cu buffer layer, the lattice mismatch between Os (0002) and Si (100) was significantly reduced from >30% to ∼7% to grow Os films with twin relationships and weak sixfold symmetries. On the other hand, the CuAu buffer layer was selected to form a fcc (111) surface mesh on H-Si (111)- 1×1, and therefore sixfold symmetric Os films were grown due to the lower lattice mismatch. Such growth properties may be applied in the high density magnetic random access memory manufacturing processes to connect the magnetic tunnel junction growth and Cu metal line directly.

原文英語
文章編號121904
期刊Applied Physics Letters
90
發行號12
DOIs
出版狀態已發佈 - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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