Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment

Shea Jue Wang, Mu Chun Wang, Shuang Yuan Chen, Wen How Lan, Bor Wen Yang, L. S. Huang, Chuan Hsi Liu

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

摘要

Decoupled plasma nitridation (DPN) or post-deposition annealing (PDA) process after high-k (HK) deposition to repair the bulk traps or the oxygen vacancy in gate dielectric is an impressive choice to raise up the device performance. Before heat stress, the electrical performance in drive current, channel mobility and subthreshold swing with both treatments was approximate, except the higher annealing atmosphere causing the thicker interfacial layer and reducing the overall related dielectric constant. After temperature stress, the electrical performance for all of the tested devices was slightly deteriorated. The degradation degree for electrical performance with PDA treatment group was the worst case due to NH3 atmosphere forming Si-H bond on the channel surface, which was broken after stress and produced more interface state reflected with the increase of subthreshold swing.

原文英語
頁(從 - 到)2203-2207
頁數5
期刊Microelectronics Reliability
55
發行號11
DOIs
出版狀態已發佈 - 2015 一月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

指紋 深入研究「Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment」主題。共同形成了獨特的指紋。

  • 引用此