Hall effect, magnetoresistivity and magnetic properties of MgB2 thin films with AlN buffer layers

G. Ilonca*, T. R. Yang, A. V. Pop, P. Balint, M. Bodea, E. MacOcian

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

MgB2 thin films were deposited at low temperature substrates, in situ, on c-plane sapphire substrates, with the aluminium nitride (AlN) buffer layers, using the multiple-target sputtering system. The magnetoresistivities were measured using dc-five probe method in applied magnetic field up to 9 Tesla. The upper critical field anisotropy, HC2 (T) and irreversibility field Hirr (T) versus temperature were determined. The Hall coefficients R(H) are slightly temperature dependent and positive in the normal state. The critical temperature of 30-32 K and critical current density of 106-107A/cm2 at 4.2 K were obtained. Using extracted data, the coherence length ξo, anisotropic coefficient γ and penetration depth λL were calculated.

原文英語
頁(從 - 到)991-996
頁數6
期刊International Journal of Modern Physics B
22
發行號8
DOIs
出版狀態已發佈 - 2008 三月 30

ASJC Scopus subject areas

  • 統計與非線性物理學
  • 凝聚態物理學

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