Growth of zinc blende-GaN on β-SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source

H. Liu*, A. C. Frenkel, J. G. Kim, R. M. Park

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

98 引文 斯高帕斯(Scopus)

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Physics & Astronomy