Growth of strained Si on high-quality relaxed Si1-x Gex with an intermediate Si1-y Cy layer

Material Science

• Devices 100%
• Film 100%
• Buffer Layer 100%
• Strain 50%
• Transistor 50%
• Density 50%
• Heterojunction 50%
• Metal Oxide 50%
• Dislocation 50%
• Surface Roughness 50%
• Electron Mobility 50%
• Oxide Semiconductor 50%
• Control Component 50%

INIS

• layers 100%
• growth 100%
• devices 60%
• substrates 60%
• films 40%
• dislocations 40%
• buffers 40%
• control 20%
• range 20%
• surfaces 20%
• density 20%
• interfaces 20%
• strains 20%
• speed 20%
• oxides 20%
• transistors 20%
• metals 20%
• roughness 20%
• semiconductor materials 20%
• germanium silicides 20%
• electron mobility 20%

Engineering

• Substrates 100%
• High Quality 100%
• Si Device 66%
• Buffer Layer 66%
• Residual Strain 33%
• High Speed 33%
• Surfaces 33%
• Heterostructures 33%
• Roughness 33%
• Long Range 33%
• Threading Dislocation 33%
• Misfit Dislocation 33%
• Dislocation Density 33%