Growth of nano-sized copper seed layer on TiN and TaSiN by new non-toxic electroless plating

R. S. Liu*, C. C. You, M. S. Tsai, S. F. Hu, K. Lee, J. Lu

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

The purpose of this research is to explore the properties of a copper seed layer grown by electroless plating on TiN. We have developed a displacement layer made of amorphous silicon (a-Si) and copper contact displacement process to improve the island structure of copper activated layer which can then be grown directly on the surface of TiN. Furthermore, this research proposes glyoxylic acid as a replacement for formaldehyde, which is commonly used at present as a reductant but regarded as a carcinogen, and is of high volatility. The copper seed layer has been grown by the electroless plating method on an activated surface of TiN, at the set temperature of 60°C with the plating bath consisting of the copper source, complexing agent, stabilizer and surfactant. The existence of a copper seed layer provides not only the conduction layer, but also the copper nucleation layer, to help the growth of electroplated copper on the surface of TiN. Moreover, based on the results of the studies can lead us to grow a nano-sized Cu seed layer on the top of a TaSiN layer.

原文英語
主出版物標題Proceedings of the 2002 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
發行者IEEE Computer Society
頁面17-20
頁數4
ISBN(電子)0780375386
DOIs
出版狀態已發佈 - 2002
事件2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 - Washington, 美国
持續時間: 2002 八月 262002 八月 28

出版系列

名字Proceedings of the IEEE Conference on Nanotechnology
2002-January
ISSN(列印)1944-9399
ISSN(電子)1944-9380

其他

其他2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
國家/地區美国
城市Washington
期間2002/08/262002/08/28

ASJC Scopus subject areas

  • 生物工程
  • 電氣與電子工程
  • 材料化學
  • 凝聚態物理學

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