Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots

S. W. Lee, P. S. Chen, T. Y. Chien, L. J. Chen*, Chi-Ta Chia, C. W. Liu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

High-quality SiGe films with a buffer layer containing Ge quantum dots have been grown by ultra-high vacuum chemical vapor deposition. For Ge dots/Si bilayers up to 10 periods, threading dislocation density and the residual strain in the SiGe uniform epilayers were found to reduce drastically with the increasing period. The Si0.8Ge0.2 film grown on a 10-period Ge dots/Si bilayers was demonstrated to have a threading dislocation density of 2.0 × 105 cm- 2 with a residual strain of only 11%. Strained-Si n-channel metal-oxide-semiconductor transistors with various buffer layers were fabricated and examined. Effective electron mobility for the strained-Si device with the multiple Ge quantum dots buffer layer was found to be 90% higher than that of Si control device. The scheme for the formation of the relaxed SiGe film serving as a virtual substrate shall be applicable to high-speed strained-Si devices.

原文英語
頁(從 - 到)120-123
頁數4
期刊Thin Solid Films
508
發行號1-2
DOIs
出版狀態已發佈 - 2006 六月 5

ASJC Scopus subject areas

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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