Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs

P. S. Chen, S. W. Lee, M. H. Lee, C. W. Liu

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    指紋 深入研究「Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs」主題。共同形成了獨特的指紋。

    Chemical Compounds

    Engineering & Materials Science

    Physics & Astronomy