Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs

INIS

• films 100%
• layers 100%
• growth 100%
• mosfet 100%
• germanium silicides 100%
• dislocations 37%
• relaxation 31%
• devices 25%
• buffers 25%
• surfaces 18%
• density 18%
• strains 18%
• substrates 12%
• thickness 12%
• thin films 12%
• control 6%
• roots 6%
• optimization 6%
• speed 6%
• trapping 6%
• oxides 6%
• defects 6%
• metals 6%
• roughness 6%
• semiconductor materials 6%
• field effect transistors 6%
• electron mobility 6%
• pits 6%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Dislocation 100%
• Surface 50%
• Strain 50%
• Devices 50%
• Density 50%
• Thin Films 33%
• Buffer Layer 33%
• Film 16%
• Heterojunction 16%
• Electron Mobility 16%
• Control Component 16%

Engineering

• Dislocation Loop 66%
• Channel Device 33%
• Square Roughness 33%