Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface

Xiao Lan Huang; Chun Liang Lin; Chun Rong Chen; Agnieszka Tomaszewska; Tsu Yi Fu

doi:10.1109/INEC.2011.5991672

Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface

Xiao Lan Huang, Chun Liang Lin, Chun Rong Chen, Agnieszka Tomaszewska, Tsu Yi Fu^*

^*此作品的通信作者

物理學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

摘要

Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along [0001] crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.

原文	英語
主出版物標題	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991672
出版狀態	已發佈 - 2011
事件	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, 臺灣持續時間: 2011 6月 21 → 2011 6月 24

出版系列

名字	Proceedings - International NanoElectronics Conference, INEC
ISSN（列印）	2159-3523

其他

其他	4th IEEE International Nanoelectronics Conference, INEC 2011
國家/地區	臺灣
城市	Tao-Yuan
期間	2011/06/21 → 2011/06/24

ASJC Scopus subject areas

電氣與電子工程

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10.1109/INEC.2011.5991672

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引用此

Huang, XL, Lin, CL, Chen, CR, Tomaszewska, A & Fu, TY 2011, Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface. 於 4th IEEE International NanoElectronics Conference, INEC 2011., 5991672, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, 臺灣, 2011/06/21. https://doi.org/10.1109/INEC.2011.5991672

@inproceedings{062a813c50b54faeb78c0c6488f7ac21,

title = "Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface",

abstract = "Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along [0001] crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.",

keywords = "Co, Ge(111), STM, island growth",

author = "Huang, {Xiao Lan} and Lin, {Chun Liang} and Chen, {Chun Rong} and Agnieszka Tomaszewska and Fu, {Tsu Yi}",

year = "2011",

doi = "10.1109/INEC.2011.5991672",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

}

TY - GEN

T1 - Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface

AU - Huang, Xiao Lan

AU - Lin, Chun Liang

AU - Chen, Chun Rong

AU - Tomaszewska, Agnieszka

AU - Fu, Tsu Yi

PY - 2011

Y1 - 2011

N2 - Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along [0001] crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.

AB - Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along [0001] crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.

KW - Co

KW - Ge(111)

KW - STM

KW - island growth

UR - http://www.scopus.com/inward/record.url?scp=80053015795&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053015795&partnerID=8YFLogxK

U2 - 10.1109/INEC.2011.5991672

DO - 10.1109/INEC.2011.5991672

M3 - Conference contribution

AN - SCOPUS:80053015795

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -

Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface

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