Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along  crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.
|主出版物標題||4th IEEE International NanoElectronics Conference, INEC 2011|
|出版狀態||已發佈 - 2011|
|事件||4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, 臺灣|
持續時間: 2011 六月 21 → 2011 六月 24
|其他||4th IEEE International Nanoelectronics Conference, INEC 2011|
|期間||2011/06/21 → 2011/06/24|
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