Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface

Xiao Lan Huang, Chun Liang Lin, Chun Rong Chen, Agnieszka Tomaszewska, Tsu Yi Fu

研究成果: 書貢獻/報告類型會議貢獻

摘要

Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along [0001] crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.

原文英語
主出版物標題4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
出版狀態已發佈 - 2011
事件4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, 臺灣
持續時間: 2011 六月 212011 六月 24

其他

其他4th IEEE International Nanoelectronics Conference, INEC 2011
國家臺灣
城市Tao-Yuan
期間11/6/2111/6/24

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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