Growth by molecular beam epitaxy and electrical characterization of Si-doped zinc blende GaN films deposited on β-SiC coated (001) Si substrates

J. G. Kim*, A. C. Frenkel, H. Liu, R. M. Park

*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

75 引文 斯高帕斯（Scopus）

指紋

深入研究「Growth by molecular beam epitaxy and electrical characterization of Si-doped zinc blende GaN films deposited on β-SiC coated (001) Si substrates」主題。共同形成了獨特的指紋。

Physics & Astronomy