Growth by molecular beam epitaxy and electrical characterization of Si-doped zinc blende GaN films deposited on β-SiC coated (001) Si substrates

J. G. Kim*, A. C. Frenkel, H. Liu, R. M. Park

*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

74 引文 斯高帕斯（Scopus）

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Physics

Material Science

Engineering