Growth by molecular beam epitaxy and electrical characterization of Si-doped zinc blende GaN films deposited on β-SiC coated (001) Si substrates

J. G. Kim*, A. C. Frenkel, H. Liu, R. M. Park

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

75 引文 斯高帕斯(Scopus)

摘要

We report the electrical characteristics of heavily Si-doped zinc blende GaN epilayers deposited on β-SiC coated (001) Si substrates. The β-GaN films were grown by molecular beam epitaxy using a rf plasma discharge, nitrogen free-radical source, and the doping concentration in the films was controlled over the range 1.5×1018-3.0×1020 cm-3 by suitably adjusting the temperature of a Si effusion cell. We have found that Si incorporation in β-GaN results in a relatively deep donor level (∼62 meV below the conduction band edge at a carrier concentration at room temperature of 1018 cm-3). Also, we present evidence of simultaneous high mobility conduction band conduction (dominant at high temperatures) and low mobility impurity band conduction (dominant at temperatures <70 K) in heavily doped (nRT≳ 1019 cm-3) material.

原文英語
頁(從 - 到)91-93
頁數3
期刊Applied Physics Letters
65
發行號1
DOIs
出版狀態已發佈 - 1994
對外發佈

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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