Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates

Shiu Jen Liu; Shyh Feng Chen; Jenh Yih Juang; Jiunn Yuan Lin; Kaung Hsiung Wu; Tseng Ming Uen; Yi Shun Gou

doi:10.1143/jjap.42.l287

Growth and transport properties of (110)-oriented La_2/3Sr_1/3MnO₃ thin films on TiO₂-buffered Si (100) substrates

Shiu Jen Liu^*
, Shyh Feng Chen
, Jenh Yih Juang
, Jiunn Yuan Lin
, Kaung Hsiung Wu
, Tseng Ming Uen
, Yi Shun Gou

^*此作品的通信作者

研究成果: 雜誌貢獻 › 通訊期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The growth and transport properties of (110)-oriented La_2/3Sr_1/3MnO₃ thin films on TiO₂-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T²- to T³-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

原文	英語
頁（從 - 到）	L287-L290
期刊	Japanese Journal of Applied Physics, Part 2: Letters
卷	42
發行號	3 B
DOIs	https://doi.org/10.1143/jjap.42.l287
出版狀態	已發佈 - 2003 3月 15
對外發佈	是

ASJC Scopus subject areas

一般工程
一般物理與天文學

存取文件

10.1143/jjap.42.l287

其它文件與鏈接

引用此

@article{dff7780274fd4edba781dedffee1fbff,

title = "Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates",

abstract = "The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20\% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.",

keywords = "Buffer layer, Colossal magnetoresistance, Hole-doped manganite, Insulator-metal transition, One-magnon scattering, Pulsed-laser deposition, Titanium dioxide, Transport properties",

author = "Liu, \{Shiu Jen\} and Chen, \{Shyh Feng\} and Juang, \{Jenh Yih\} and Lin, \{Jiunn Yuan\} and Wu, \{Kaung Hsiung\} and Uen, \{Tseng Ming\} and Gou, \{Yi Shun\}",

year = "2003",

month = mar,

day = "15",

doi = "10.1143/jjap.42.l287",

language = "English",

volume = "42",

pages = "L287--L290",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "3 B",

}

TY - JOUR

T1 - Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates

AU - Liu, Shiu Jen

AU - Chen, Shyh Feng

AU - Juang, Jenh Yih

AU - Lin, Jiunn Yuan

AU - Wu, Kaung Hsiung

AU - Uen, Tseng Ming

AU - Gou, Yi Shun

PY - 2003/3/15

Y1 - 2003/3/15

N2 - The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

AB - The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

KW - Buffer layer

KW - Colossal magnetoresistance

KW - Hole-doped manganite

KW - Insulator-metal transition

KW - One-magnon scattering

KW - Pulsed-laser deposition

KW - Titanium dioxide

KW - Transport properties

UR - https://www.scopus.com/pages/publications/0037762594

UR - https://www.scopus.com/pages/publications/0037762594#tab=citedBy

U2 - 10.1143/jjap.42.l287

DO - 10.1143/jjap.42.l287

M3 - Letter

AN - SCOPUS:0037762594

SN - 0021-4922

VL - 42

SP - L287-L290

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 3 B

ER -

Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此

Growth and transport properties of (110)-oriented La_2/3Sr_1/3MnO₃ thin films on TiO₂-buffered Si (100) substrates