Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

Hung Min Lin; Jian Yang; Yong Lin Chen; Yau Chung Liu; Kai Min Yin; Ji Jung Kai; Fu Rong Chen; Li Chyong Chen; Yang Fang Chen; Chia Chun Chen

doi:10.1557/proc-776-q2.6

Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

Hung Min Lin
, Jian Yang
, Yong Lin Chen
, Yau Chung Liu
, Kai Min Yin
, Ji Jung Kai
, Fu Rong Chen
, Li Chyong Chen
, Yang Fang Chen
, Chia Chun Chen^*

^*此作品的通信作者

化學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

摘要

High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm^-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

原文	英語
頁（從 - 到）	23-30
頁數	8
期刊	Materials Research Society Symposium - Proceedings
卷	776
DOIs	https://doi.org/10.1557/proc-776-q2.6
出版狀態	已發佈 - 2003
事件	Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing - San Francisco, CA, 美国持續時間: 2003 4月 21 → 2003 4月 25

ASJC Scopus subject areas

一般材料科學
凝聚態物理學
材料力學
機械工業

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@article{f7aa39f272614431835e0cb6344b157e,

title = "Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires",

abstract = "High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.",

author = "Lin, \{Hung Min\} and Jian Yang and Chen, \{Yong Lin\} and Liu, \{Yau Chung\} and Yin, \{Kai Min\} and Kai, \{Ji Jung\} and Chen, \{Fu Rong\} and Chen, \{Li Chyong\} and Chen, \{Yang Fang\} and Chen, \{Chia Chun\}",

year = "2003",

doi = "10.1557/proc-776-q2.6",

language = "English",

volume = "776",

pages = "23--30",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing ; Conference date: 21-04-2003 Through 25-04-2003",

}

TY - JOUR

T1 - Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

AU - Lin, Hung Min

AU - Yang, Jian

AU - Chen, Yong Lin

AU - Liu, Yau Chung

AU - Yin, Kai Min

AU - Kai, Ji Jung

AU - Chen, Fu Rong

AU - Chen, Li Chyong

AU - Chen, Yang Fang

AU - Chen, Chia Chun

PY - 2003

Y1 - 2003

N2 - High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

AB - High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

UR - https://www.scopus.com/pages/publications/12144285923

UR - https://www.scopus.com/pages/publications/12144285923#tab=citedBy

U2 - 10.1557/proc-776-q2.6

DO - 10.1557/proc-776-q2.6

M3 - Conference article

AN - SCOPUS:12144285923

SN - 0272-9172

VL - 776

SP - 23

EP - 30

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing

Y2 - 21 April 2003 through 25 April 2003

ER -

Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

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