Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

Hung Min Lin, Jian Yang, Yong Lin Chen, Yau Chung Liu, Kai Min Yin, Ji Jung Kai, Fu Rong Chen, Li Chyong Chen, Yang Fang Chen, Chia Chun Chen*


研究成果: 雜誌貢獻會議論文同行評審


High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

頁(從 - 到)23-30
期刊Materials Research Society Symposium - Proceedings
出版狀態已發佈 - 2003
事件Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing - San Francisco, CA, 美国
持續時間: 2003 4月 212003 4月 25

ASJC Scopus subject areas

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業


深入研究「Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires」主題。共同形成了獨特的指紋。