Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

Hung Min Lin; Jian Yang; Yong Lin Chen; Yau Chung Liu; Kai Min Yin; Ji Jung Kai; Fu Rong Chen; Li Chyong Chen; Yang Fang Chen; Chia Chun Chen

doi:10.1557/proc-776-q2.6

Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

Hung Min Lin, Jian Yang, Yong Lin Chen, Yau Chung Liu, Kai Min Yin, Ji Jung Kai, Fu Rong Chen, Li Chyong Chen, Yang Fang Chen, Chia Chun Chen^*

^*此作品的通信作者

化學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

摘要

High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm^-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

原文	英語
頁（從 - 到）	23-30
頁數	8
期刊	Materials Research Society Symposium - Proceedings
卷	776
DOIs	https://doi.org/10.1557/proc-776-q2.6
出版狀態	已發佈 - 2003
事件	Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing - San Francisco, CA, 美国持續時間: 2003 4月 21 → 2003 4月 25

ASJC Scopus subject areas

一般材料科學
凝聚態物理學
材料力學
機械工業

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@article{f7aa39f272614431835e0cb6344b157e,

title = "Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires",

abstract = "High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.",

author = "Lin, {Hung Min} and Jian Yang and Chen, {Yong Lin} and Liu, {Yau Chung} and Yin, {Kai Min} and Kai, {Ji Jung} and Chen, {Fu Rong} and Chen, {Li Chyong} and Chen, {Yang Fang} and Chen, {Chia Chun}",

year = "2003",

doi = "10.1557/proc-776-q2.6",

language = "English",

volume = "776",

pages = "23--30",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing ; Conference date: 21-04-2003 Through 25-04-2003",

}

TY - JOUR

T1 - Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

AU - Lin, Hung Min

AU - Yang, Jian

AU - Chen, Yong Lin

AU - Liu, Yau Chung

AU - Yin, Kai Min

AU - Kai, Ji Jung

AU - Chen, Fu Rong

AU - Chen, Li Chyong

AU - Chen, Yang Fang

AU - Chen, Chia Chun

PY - 2003

Y1 - 2003

N2 - High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

AB - High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

UR - http://www.scopus.com/inward/record.url?scp=12144285923&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12144285923&partnerID=8YFLogxK

U2 - 10.1557/proc-776-q2.6

DO - 10.1557/proc-776-q2.6

M3 - Conference article

AN - SCOPUS:12144285923

SN - 0272-9172

VL - 776

SP - 23

EP - 30

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing

Y2 - 21 April 2003 through 25 April 2003

ER -

Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

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