TY - GEN
T1 - Growth and characterization of InN epi-films on nitrided Si3N4 layer by RF-MOMBE
AU - Chen, Sheng
AU - Chen, Wei Chun
AU - Cheng, Chin Pao
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/5
Y1 - 2019/5
N2 - InN epi-films were grown on nitrided silicon nitride (Si3N4) layer/Si(111) substrate by radio-frequency plasma-assisted metal-organic molecular beam epitaxy (RF-MOMBE). We have investigated the effect of nitrided Si3N4 layer on the structural, optical and electrical properties of the InN films with different nitridation time. The thickness of the single crystalline β-Si3N4 layer was confirmed with index of refraction by Ellipsometer. When the nitridation time at 60 min, the Si3N4 layer was nearly to stoichiometry. Also, thickness of Si3N4 was measured around 7.23 nm. The X-ray diffraction (XRD) pattern shows a wurtzite InN structure with oriented (0001). Phi-scan XD shows the InN films grew epitaxially on the Si(111) substrates. The mobility of InN layer was determined by Hall effect analyzer and found to be in the range of 16.8-64.1 cm2/V-s.
AB - InN epi-films were grown on nitrided silicon nitride (Si3N4) layer/Si(111) substrate by radio-frequency plasma-assisted metal-organic molecular beam epitaxy (RF-MOMBE). We have investigated the effect of nitrided Si3N4 layer on the structural, optical and electrical properties of the InN films with different nitridation time. The thickness of the single crystalline β-Si3N4 layer was confirmed with index of refraction by Ellipsometer. When the nitridation time at 60 min, the Si3N4 layer was nearly to stoichiometry. Also, thickness of Si3N4 was measured around 7.23 nm. The X-ray diffraction (XRD) pattern shows a wurtzite InN structure with oriented (0001). Phi-scan XD shows the InN films grew epitaxially on the Si(111) substrates. The mobility of InN layer was determined by Hall effect analyzer and found to be in the range of 16.8-64.1 cm2/V-s.
KW - indium nitride
KW - silicon nitride
UR - http://www.scopus.com/inward/record.url?scp=85072950380&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85072950380&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2019.8819075
DO - 10.1109/ICIPRM.2019.8819075
M3 - Conference contribution
AN - SCOPUS:85072950380
T3 - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings
BT - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Compound Semiconductor Week, CSW 2019
Y2 - 19 May 2019 through 23 May 2019
ER -