Growth and characterization of InN epi-films on nitrided Si3N4 layer by RF-MOMBE

Sheng Chen, Wei Chun Chen, Chin Pao Cheng

研究成果: 書貢獻/報告類型會議貢獻

摘要

InN epi-films were grown on nitrided silicon nitride (Si3N4) layer/Si(111) substrate by radio-frequency plasma-assisted metal-organic molecular beam epitaxy (RF-MOMBE). We have investigated the effect of nitrided Si3N4 layer on the structural, optical and electrical properties of the InN films with different nitridation time. The thickness of the single crystalline β-Si3N4 layer was confirmed with index of refraction by Ellipsometer. When the nitridation time at 60 min, the Si3N4 layer was nearly to stoichiometry. Also, thickness of Si3N4 was measured around 7.23 nm. The X-ray diffraction (XRD) pattern shows a wurtzite InN structure with oriented (0001). Phi-scan XD shows the InN films grew epitaxially on the Si(111) substrates. The mobility of InN layer was determined by Hall effect analyzer and found to be in the range of 16.8-64.1 cm2/V-s.

原文英語
主出版物標題2019 Compound Semiconductor Week, CSW 2019 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728100807
DOIs
出版狀態已發佈 - 2019 五月
事件2019 Compound Semiconductor Week, CSW 2019 - Nara, 日本
持續時間: 2019 五月 192019 五月 23

出版系列

名字2019 Compound Semiconductor Week, CSW 2019 - Proceedings

會議

會議2019 Compound Semiconductor Week, CSW 2019
國家日本
城市Nara
期間19/5/1919/5/23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics

指紋 深入研究「Growth and characterization of InN epi-films on nitrided Si<sub>3</sub>N<sub>4</sub> layer by RF-MOMBE」主題。共同形成了獨特的指紋。

  • 引用此

    Chen, S., Chen, W. C., & Cheng, C. P. (2019). Growth and characterization of InN epi-films on nitrided Si3N4 layer by RF-MOMBE. 於 2019 Compound Semiconductor Week, CSW 2019 - Proceedings [8819075] (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2019.8819075