GMR effect of permalloy/Cu multilayers on Si(100) and Si(111)

C. H. Ho*, C. K. Lo, Y. D. Yao, S. F. Lee, I. Klik, M. T. Lin, Y. Liou, D. Y. Chiang, D. R. Huang


研究成果: 雜誌貢獻會議論文同行評審


[Permalloy1.5nm/Cu(t)]n multilayers with a 5 nm thick Fe buffer layer were sputtered on Si(100) and Si(111). Under the same preparation condition, the giant magnetoresistance (GMR) ratio of the multilayers on Si(100) is always larger than that on Si(111). The GMR ratio is very sensitive to the Ar gas pressure during sputtering. We found that 2 m Torr is the optimum discharge gas pressure. Electrical and magnetic properties of permalloy/Cu multilayers with a Cu layer thickness (t) near its second oscillatory peak were reported. We conclude that the GMR ratio of the [permalloy/Cu(t)]n multilayers was strongly dependent on the Cu layer thickness t, on the periodicity number n, and on the (100) crystalline orientation of the Si substrate.

頁(從 - 到)73-77
期刊Materials Research Society Symposium - Proceedings
出版狀態已發佈 - 1998
事件Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
持續時間: 1998 4月 131998 4月 15

ASJC Scopus subject areas

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業


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